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Computational Materials Science

Volumn 24, Issue 1-2, 2002, Pages 284-289

Transport properties of Al-Si solid solutions: Theory

(6) Livanov, D V a Isaev, E I a Manokhin, S I a Mikhaylushkin, A S a Vekilov, Yu Kh a Simak, S I b

a NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS (Russian Federation)

b CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

Al; Electronic topological transitions; Fermi surface; Hall constant; KKR CPA; Resistivity; Si; Thermoelectric power

Indexed keywords

ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; FERMI SURFACE; HALL EFFECT; HIGH PRESSURE EFFECTS IN SOLIDS; SPECTRUM ANALYSIS; SUPERCONDUCTIVITY; SYNTHESIS (CHEMICAL); THERMOELECTRICITY; TRANSPORT PROPERTIES;

ELECTRONIC TOPOLOGICAL TRANSITIONS (ETT);

SOLID SOLUTIONS;

EID: 0036577399 PISSN: 09270256 EISSN: None Source Type: Journal
DOI: 10.1016/S0927-0256(02)00197-0 Document Type: Conference Paper

Times cited : (5)

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