RBS-channeling measurements of sapphire (0 0 1) substrate implanted with high-energy O and Cu ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 528-532

  Nakao, S ^a   Miyagawa, Y ^a   Miyagawa, S ^a   Tazawa, M ^a   Ikeyama, M ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Channeling spectra; Ion implantation; Nanoparticle; Rutherford backscattering spectrometry; Thermal annealing

Indexed keywords

COPPER OXIDES; DIFFUSION; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; RADIATION DAMAGE; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

CHANNELING SPECTRA;

NANOSTRUCTURED MATERIALS;

EID: 0036569714     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01224-1     Document Type: Conference Paper

References (12)