Application of NRA to evaluation of boron implants in Si for shallow junctions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 552-555

  Suzuki, M ^a   Tomita, M ^a   Murakoshi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Boron; Carrier concentration; Ion implantation; NRA; Quantification; Shallow junction

Indexed keywords

BORON; CARRIER CONCENTRATION; ION IMPLANTATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON;

NUCLEAR REACTION ANALYSIS (NRA);

NUCLEAR PHYSICS;

EID: 0036569381     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01259-9     Document Type: Conference Paper

References (6)