Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process

Applied Physics A: Materials Science and Processing

Volumn 74, Issue 5, 2002, Pages 707-710

  Wang, G S ^a   Meng, X J ^a   Lai, Z Q ^a   Yu, J ^a   Sun, J L ^a   Cheng, J G ^a   Tang, J ^a   Guo, S L ^a   Chu, J H ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; FATIGUE OF MATERIALS; FILM GROWTH; LANTHANUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR ORIENTATION; MOLECULAR STRUCTURE; PERMITTIVITY; POLARIZATION; SEMICONDUCTING SILICON; SOL-GELS; X RAY DIFFRACTION ANALYSIS;

POLARIZATION FATIGUE; POLYCRYSTALLINE FILMS;

POLYCRYSTALLINE MATERIALS;

EID: 0036568612     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100941     Document Type: Article

References (18)