Fully integrated 2.2-mW CMOS front end for a 900-MHz wireless receiver

IEEE Journal of Solid-State Circuits

Volumn 37, Issue 5, 2002, Pages 662-669

  Mahdavi, Shahram ^a,b   Abidi, Asad A ^a,c  

^a IEEE   (United States)

^b Sequoia Communications   (United States)

^c University of California   (United States)

Author keywords

1 f noise; Direct conversion receiver; ESD protection; Flicker noise; Low noise amplifier; Low power receiver; Mixer; RF CMOS; Spiral inductor; Zero IF

Indexed keywords

DIRECT CONVERSION RECEIVER; ELECTROSTATIC DISCHARGE; FLICKER NOISE; INTERMEDIATE FREQUENCY; LOCAL OSCILLATOR; LOW NOISE AMPLIFIER; LOW POWER RECEIVER; SPECTRAL DENSITY; SPIRAL INDUCTOR; WIRELESS RECEIVERS;

ELECTRIC DISCHARGES; ELECTRIC INDUCTORS; ELECTROSTATICS; ENERGY UTILIZATION; FREQUENCIES; INTEGRATED CIRCUIT LAYOUT; INTERMEDIATE FREQUENCY AMPLIFIERS; MIXER CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL RECEIVERS; SPURIOUS SIGNAL NOISE;

CMOS INTEGRATED CIRCUITS;

EID: 0036565041     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.997862     Document Type: Article

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