-
1
-
-
4244197214
-
Non-volatile memory technology
-
Washington, DC, USA, December
-
Zambrano R, Casagrande G, Bez R. Non-volatile memory technology. In: IEDM '01 Short Course. Washington, DC, USA, December 2001.
-
(2001)
IEDM '01 Short Course
-
-
Zambrano, R.1
Casagrande, G.2
Bez, R.3
-
2
-
-
0035717521
-
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
-
Washington DC, Paper 36.5
-
Lai S, Lowrey T. OUM - a 180 nm nonvolatile memory cell element technology for stand alone and embedded applications. In: Proceedings of the IEDM '01 Conference, Washington DC, Paper 36.5, 2001.
-
(2001)
Proceedings of the IEDM '01 Conference
-
-
Lai, S.1
Lowrey, T.2
-
3
-
-
23544445400
-
Magnetoresistive RAM (MRAM)
-
Washington DC, USA, December
-
Tehrani S. Magnetoresistive RAM (MRAM). In: IEDM '01 Short Course. Washington DC, USA, December 2001.
-
(2001)
IEDM '01 Short Course
-
-
Tehrani, S.1
-
4
-
-
0013411135
-
Highly reliable 1 Mbit ferroelectric memories with newly developed BLT thin films and steady integration schemes
-
Washington DC, Paper 36.2
-
Yang B, Kang YM, Lee SS, Noh KH, Kim NK, Yeom SJ, Kang NS, Yoon HG. Highly reliable 1 Mbit ferroelectric memories with newly developed BLT thin films and steady integration schemes. In: Proceedings of the IEDM '01 Conference, Washington DC, Paper 36.2, 2001.
-
(2001)
Proceedings of the IEDM '01 Conference
-
-
Yang, B.1
Kang, Y.M.2
Lee, S.S.3
Noh, K.H.4
Kim, N.K.5
Yeom, S.J.6
Kang, N.S.7
Yoon, H.G.8
-
6
-
-
0013360251
-
Advanced 0.5 μm FRAM device technology with full compatibility of half-micron CMOS logic device
-
Washington DC, Paper 25.5
-
Yamazaki T, Inoue K, Miyazawa H, Nakamura M, Sashida N, Satomi R, Kerry A, Katoh Y, Noshiro H, Takai K, Shinohara R, Ohno C, Nakajima T, Furumura Y, Kawamura S. Advanced 0.5 μm FRAM device technology with full compatibility of half-micron CMOS logic device. In: Proceedings of the IEDM '97 Conference, Washington DC, Paper 25.5, 1997.
-
(1997)
Proceedings of the IEDM '97 Conference
-
-
Yamazaki, T.1
Inoue, K.2
Miyazawa, H.3
Nakamura, M.4
Sashida, N.5
Satomi, R.6
Kerry, A.7
Katoh, Y.8
Noshiro, H.9
Takai, K.10
Shinohara, R.11
Ohno, C.12
Nakajima, T.13
Furumura, Y.14
Kawamura, S.15
-
7
-
-
0013405006
-
Oxygen barrier for stacked SBT-FeCap on W-plugs
-
Nara, Japan, Paper 31A-TF7-3C
-
Lisoni J, Maes D, Everaert JL, Johnson J, Paraschiv V, Haspeslagh L, Wouters DJ, Casella P, Corvasce C, Zambrano R, Monchoix H, Van Autryve L. Oxygen barrier for stacked SBT-FeCap on W-plugs. In: Proceedings of the IFFF 2002 Conference, Nara, Japan, Paper 31A-TF7-3C, 2002.
-
(2002)
Proceedings of the IFFF 2002 Conference
-
-
Lisoni, J.1
Maes, D.2
Everaert, J.L.3
Johnson, J.4
Paraschiv, V.5
Haspeslagh, L.6
Wouters, D.J.7
Casella, P.8
Corvasce, C.9
Zambrano, R.10
Monchoix, H.11
Van Autryve, L.12
-
8
-
-
0036053623
-
Novel integration technologies for highly manufacturable 32 Mb FRAM
-
Hawaii, USA
-
Kim HH, Song YJ, Lee SY, Joo HJ, Jang NW, Jung DJ, Park YS, Park SO, Lee KM, Joo SH, Lee SW, Nam SD, Kim K. Novel integration technologies for highly manufacturable 32 Mb FRAM. In: Proceedings of the VLSI Technology Symposium, Hawaii, USA, 2002.
-
(2002)
Proceedings of the VLSI Technology Symposium
-
-
Kim, H.H.1
Song, Y.J.2
Lee, S.Y.3
Joo, H.J.4
Jang, N.W.5
Jung, D.J.6
Park, Y.S.7
Park, S.O.8
Lee, K.M.9
Joo, S.H.10
Lee, S.W.11
Nam, S.D.12
Kim, K.13
-
9
-
-
0013448879
-
Ultra-thin EBL (encapsulation barrier layer) for ferroelectric capacitor
-
Washington DC, Paper 25.6
-
Park IS, Kim YK, Lee SM, Chung JH, Kang SB, Park CS, Yoo CY, Lee SI, Lee MY. Ultra-thin EBL (encapsulation barrier layer) for ferroelectric capacitor. In: Proceedings of the IEDM '97 Conference, Washington DC, Paper 25.6, 1997.
-
(1997)
Proceedings of the IEDM '97 Conference
-
-
Park, I.S.1
Kim, Y.K.2
Lee, S.M.3
Chung, J.H.4
Kang, S.B.5
Park, C.S.6
Yoo, C.Y.7
Lee, S.I.8
Lee, M.Y.9
-
10
-
-
0033281167
-
Al Interconnect/Cu plug structure for FeRAM multilevel interconnect
-
Kyoto, Japan, Paper 10B-3
-
Kishii S, Miyazawa H, Katoh Y, Misawa N, Eshita T, Arimoto Y. Al Interconnect/Cu plug structure for FeRAM multilevel interconnect. In: Proceedings of the VLSI Technology Symposium, Kyoto, Japan, Paper 10B-3, 1999.
-
(1999)
Proceedings of the VLSI Technology Symposium
-
-
Kishii, S.1
Miyazawa, H.2
Katoh, Y.3
Misawa, N.4
Eshita, T.5
Arimoto, Y.6
-
11
-
-
0032277980
-
Capacitor-on-metal/via-stacked-plug (CMVP) memory cell for 0.25 μm CMOS embedded FeRAM
-
S. Francisco, USA, Paper 13.5
-
Amanuma K, Tatsumi T, Maejima Y, Takahashi S, Hada H, Kizaki H, Kunio T. Capacitor-on-metal/via-stacked-plug (CMVP) memory cell for 0.25 μm CMOS embedded FeRAM. In: Proceedings of the IEDM '98 Conference, S. Francisco, USA, Paper 13.5, 1998.
-
(1998)
Proceedings of the IEDM '98 Conference
-
-
Amanuma, K.1
Tatsumi, T.2
Maejima, Y.3
Takahashi, S.4
Hada, H.5
Kizaki, H.6
Kunio, T.7
-
12
-
-
0013359513
-
3/Ir capacitors
-
Aachen, Germany, Paper 019C
-
3/Ir capacitors. In: Proceedings of the ISIF 2000 Conference, Aachen, Germany, Paper 019C, 2000.
-
(2000)
Proceedings of the ISIF 2000 Conference
-
-
Gilbert, S.R.1
Amano, J.2
Moise, T.S.3
Summerfelt, S.R.4
Xing, G.5
Colombo, L.6
Sakoda, T.7
-
13
-
-
0013405814
-
Development of an SBT MOCVD production process for FeRAM applications
-
Colorado Springs, USA, Paper 8.2.1
-
Everaert JL, Bartic A, Kaczer B, Wouters D, Monchoix H, Mitaut C, Van Autryve L, Pavano R, Casella P, Zambrano R. Development of an SBT MOCVD production process for FeRAM applications. In: Proceedings of the ISIF 2001 Conference, Colorado Springs, USA, Paper 8.2.1, 2001.
-
(2001)
Proceedings of the ISIF 2001 Conference
-
-
Everaert, J.L.1
Bartic, A.2
Kaczer, B.3
Wouters, D.4
Monchoix, H.5
Mitaut, C.6
Van Autryve, L.7
Pavano, R.8
Casella, P.9
Zambrano, R.10
-
14
-
-
0013367674
-
Does memory of dream come true? (Market prospects and technical hurdle for FRAM)
-
Nara, Japan, Paper 30A-PL2-1PL
-
Nishi H. Does memory of dream come true? (Market prospects and technical hurdle for FRAM). In: Proceedings of the IFFF 2002 Conference, Nara, Japan, Paper 30A-PL2-1PL, 2002.
-
(2002)
Proceedings of the IFFF 2002 Conference
-
-
Nishi, H.1
-
15
-
-
0013444391
-
Status, issues on FeRAM integration and characterization
-
Nara, Japan, Paper 30B-FD2-1IN
-
Park YG. Status, issues on FeRAM integration and characterization. In: Proceedings of the IFFF 2002 Conference, Nara, Japan, Paper 30B-FD2-1IN, 2002.
-
(2002)
Proceedings of the IFFF 2002 Conference
-
-
Park, Y.G.1
|