Structure of BaTiO3 thin films modified by film-substrate interaction

Materials Science in Semiconductor Processing

Volumn 5, Issue 2-3, 2002, Pages 195-197

  Nair, Jaya P ^a   Stavitski, Natalie ^a   Lyahovitskaya, Vera ^a   Zon, Ilya ^a   Lubomirsky, Igor ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

BaTiO3; Crystallization; Film substrate interaction

Indexed keywords

BARIUM COMPOUNDS; CRYSTAL STRUCTURE; CRYSTALLIZATION; PHASE TRANSITIONS; PYROELECTRICITY; SUBSTRATES;

FILM-SUBSTRATE INTERACTIONS;

THIN FILMS;

EID: 0036557658     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00111-7     Document Type: Conference Paper

References (17)

1. Franco J., Shirane G. Ferroelectric crystals. 1998;Dover Publications, New York.
2. Pertsev N.A., Zembilgotov A.G., Tagantsev A.K. Phys Rev Lett. 80:1998;1988.
3. Schroder D.K. Semiconductor material and device characterization. 1990;Wiley Interscience, New York.
4. Arend H., Kihlborg L. J Am Ceram Soc. 52:1969;63.
5. Eibl O., Pongratz P., Skalicky P., Schmelz H. Philos Mag A. 60:1989;601.
6. Cho W.S., Hamada E., Takayanagi K. J Appl Phys. 81:1997;3000.
7. Shibahara H., Hashimoto H. J Crystal Growth. 67:1984;227.
8. Vasant Kumar C.V.R., Dhar A., Mansingh A. Appl Phys Lett. 60:1992;947.
9. Akishige Y., Oomi G., Yamamoto T., Sawaguchi E. J Phys Soc Jpn. 58:1989;930.
10. Deguchi K., Kobayashi H., Nakamura E., Yamaguchi H., Uwe H., Sakudo T. J Phys Soc Jpn. 57:1988;4011.
11. Sawaguchi E., Akishige Y., Kobayashi M. J Phys Soc Jpn. 54:1985;480.
12. Ishibashi Y., Tomatsu M. J Phys Soc Jpn. 58:1989;1058.
13. Ishibashi Y. J Phys Soc Jpn. 63:1994;1396.
14. Ishibashi Y. J Phys Soc Jpn. 70:2001;307.
15. Ishibashi Y. J Phys Soc Jpn. 70:2001;2228.
16. Yamaguchi M., Inoue K., Yagi T., Akishige Y. Phys Rev Lett. 74:1995;2126.
17. Yamaguchi H., Yamada A., Uwe H., Sakudo T. Phys Rev B. 43:1991;4473.