Influence of Mn incorporation on molecular beam epitaxial growth of GaMnN film

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 4 A, 2002, Pages

  Okuno, Tomohisa ^a,b   Fujino, Toshiaki ^a,b   Shindo, Masato ^a,b   Katayama, Mitsuhiro ^a,b   Oura, Kenjiro ^a,b   Sonoda, Saki ^a,b   Shimizu, Saburo ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b ULVAC INC   (Japan)

Author keywords

Diluted magnetic semiconductor; Ferromagnetism; GaMnN; Ion scattering spectroscopy; Molecule beam epitaxy

Indexed keywords

FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE STRUCTURE;

ION SCATTERING SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0036544464     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l415     Document Type: Article

References (14)