Capacitive pressure sensor with monolithically integrated CMOS readout circuit for high temperature applications

Sensors and Actuators, A: Physical

Volumn 97-98, Issue , 2002, Pages 83-87

  Kasten, Klaus ^a,c   Kordas, Norbert ^b   Kappert, Holger ^b   Mokwa, Wilfried ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FRAUNHOFER INSTITUTE FOR MICROELECTRONIC CIRCUITS AND SYSTEMS   (Germany)

^c ROBERT BOSCH GMBH   (Germany)

Author keywords

High temperature application; Monolithic integration; Pressure sensor; SIMOX; SOI; Surface micromachining

Indexed keywords

CMOS INTEGRATED CIRCUITS; HIGH TEMPERATURE APPLICATIONS; ION IMPLANTATION; MICROMACHINING; OXYGEN; PRESSURE MEASUREMENT; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

CMOS READOUT CIRCUITS; FULL SCALE OUTPUT; OFFSET TEMPERATURE COEFFICIENT; PRESSURE SENSOR; SEPARATION BY IMPLANTATION OF OXYGEN;

SENSORS;

EID: 0036544460     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00799-3     Document Type: Conference Paper

References (8)

1. Silicon carbide as a new MEMS technology
2. SOI, SIMOX, from bulk to surface micromachining, a new age for silicon sensors and actuators
3. Capacitive differential pressure sensor for harsh environments
4. CMOS-compatible capacitive high temperature pressure sensors
5. Surface micromachined pressure sensors with integrated CMOS read-out electronics (Transducers'93, Yokohama 1993)
6. A 1-Kbit EEPROM in SIMOX technology for high-temperature applications up to 250 °C
7. A single-poly EEPROM cell in SIMOX technology for high temperature applications up to 250 °C
8. Hochtemperaturtaugliche, Analoge Schaltungskomponenten in SIMOX-Technologie