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Volumn 190, Issue 3, 2002, Pages 735-742
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Disorder effects on carrier dynamics in a single quantum wire
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Author keywords
[No Author keywords available]
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Indexed keywords
DYNAMICS;
ETCHING;
EXCITONS;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
RELAXATION PROCESSES;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SPECTROSCOPIC ANALYSIS;
THICKNESS MEASUREMENT;
CARRIER DYNAMICS;
DISORDER EFFECTS;
EXCITON DYNAMICS;
GALLIUM ALUMINUM ARSENIDE;
HIGH SPATIAL RESOLUTION SPECTROSCOPY;
QUANTUM BOXES;
SEMICONDUCTOR QUANTUM WIRES;
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EID: 0036542575
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200204)190:3<735::AID-PSSA735>3.0.CO;2-B Document Type: Conference Paper |
Times cited : (2)
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References (17)
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