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Volumn 190, Issue 3, 2002, Pages 799-802
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Binding energy of negatively charged exciton in a semiconductor quantum well: The role of interface defects
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Author keywords
[No Author keywords available]
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Indexed keywords
BINDING ENERGY;
DEFECTS;
INTERFACES (MATERIALS);
NEGATIVE IONS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR QUANTUM WELLS;
VARIATIONAL TECHNIQUES;
ALUMINUM GALLIUM ARSENIDE QUANTUM WELL;
GALLIUM ARSENIDE QUANTUM WELL;
TRION;
EXCITONS;
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EID: 0036542444
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200204)190:3<799::AID-PSSA799>3.0.CO;2-8 Document Type: Article |
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Times cited : (4)
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References (8)
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