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Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 571-574

Recombination mechanism of excess carriers in hydrogenated amorphous germanium

(3) Marques, F C b De Lima, M M b Taylor, P C c

a UNIVERSITY OF UTAH (United States)

b UNIVERSITY OF CAMPINAS (Brazil)

c NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CHARGE CARRIERS; DENSITY (OPTICAL); ELECTRON TRAPS; HOLE TRAPS; HYDROGENATION; PARAMAGNETIC RESONANCE;

BIMOLECULAR RECOMBINATIONS; LIGHT INTENSITY; SPIN DENSITY;

SEMICONDUCTING GERMANIUM;

EID: 0036539906 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)01200-5 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.