Time-delay circuit model of high-speed p-i-n photodiodes

IEEE Photonics Technology Letters

Volumn 14, Issue 4, 2002, Pages 525-527

  Jou, Jau Ji ^b   Liu, Cheng Kuang ^a,b   Hsiao, Chien Mei ^b   Lin, Huang Hsiang ^b   Lee, Hsiu Chih ^b  

^a IEEE

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Circuit model; Optical communication; Photodetectors; Photoreceivers; Transit time

Indexed keywords

DELAY CIRCUITS; ELECTRIC CURRENTS; MONOCHROMATORS; NETWORKS (CIRCUITS); OPTICAL COMMUNICATION; PHOTODETECTORS; SEMICONDUCTOR DEVICE MODELS; SIMULATORS; TRANSIT TIME DEVICES;

HIGH-SPEED P-I-N PHOTODIODES;

PHOTODIODES;

EID: 0036539582     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.992599     Document Type: Article

References (9)

1. Dynamic response of high-speed PIN and schottky-barrier photodiode layers to nonuniform optical illumination
2. Ultrawide-band long-wavelength PIN photodetectors
3. Depletion-layer photoeffects in semiconductors
4. Transit-time considerations in PIN diodes
5. InGaAs PIN photodetectors with modulation response to millimeter wavelengths
6. Design, modeling and characterization of monolithically integrated InP-based (1.55 μm) high-speed (24 Gb/s) PIN/HBT front-end photoreceivers
7. State-space modeling of the PIN photodetector
8. Applications of PSPICE simulation software to the study of optoelectronic integrated circuit and devices
9. PIN avalanche photodiodes model for circuit simulation