Growth and photoconductor properties of HgCdTe epilayers grown by hot wall epitaxy method

Journal of Crystal Growth

Volumn 240, Issue 1-2, 2002, Pages 135-141

  Hong, K J ^a   Jeong, J W ^a   Baek, H W ^a   Jeong, T S ^b   Youn, C J ^b   Moon, J D ^c   Park, J S ^a  

^a Chosun University   (South Korea)

^b Chonbuk National University   (South Korea)

^c Dongshin University   (South Korea)

Author keywords

A3. Hot wall epitaxy

Indexed keywords

ENERGY GAP; MERCURY COMPOUNDS; PHOTOCONDUCTING MATERIALS; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS;

EPILAYERS; HOT WALL EPITAXY;

EPITAXIAL GROWTH;

EID: 0036538374     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02092-9     Document Type: Article

References (17)