Misfit dislocation generated in InAs epilayer and InP substrate interfaces grown by metalorganic chemical-vapor deposition

Materials Letters

Volumn 53, Issue 6, 2002, Pages 446-451

  Kim, Jwayeon ^a   Yun, Euijung ^a   Yu, Jaekeun ^a   Park, Kyeongsoon ^b   Chai, Sanghoon ^a   Yang, Jungsung ^c   Choi, Sangwook ^d  

^a Hoseo University   (South Korea)

^b Sejong University   (South Korea)

^c Kyungnam University   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

60 Type dislocation; InAs; InP; Lomer type dislocation; Misfit dislocation; MOCVD

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EPILAYERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036534060     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(01)00524-9     Document Type: Article

References (12)