The growth of AlN films composed of silkworm-shape grains and the orientation mechanism

Materials Letters

Volumn 53, Issue 4-5, 2002, Pages 367-370

  Bo, Wang ^a   Mei, Wang ^a,b   Ruzhi, Wang ^a,b   Anping, Huang ^a,b   Hua, Zhou ^a,b   Yunjuan, Zou ^a,b   Hui, Yan ^a,b   Seiping, Wong ^c  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Aluminum nitride; Film; Growth; Orientation; Silkworm shape grain; Sputtering

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; FILM GROWTH; MAGNETRON SPUTTERING; NUCLEATION; SILICON WAFERS; SUBSTRATES;

ALUMINIUM NITRIDE (ALN) FILMS;

THIN FILMS;

EID: 0036533463     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(01)00509-2     Document Type: Article

References (9)