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Volumn 72, Issue 1-4, 2002, Pages 327-333

A simple passivation technique for the edge area of silicon solar cells improves the efficiency

Author keywords

Edge shunt passivation; Efficiency improvement

Indexed keywords

CRYSTAL DEFECTS; EFFICIENCY; LEAKAGE CURRENTS; PASSIVATION; PLASMA ETCHING;

EID: 0036533284     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(01)00180-5     Document Type: Conference Paper
Times cited : (14)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.