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Volumn 72, Issue 1-4, 2002, Pages 327-333
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A simple passivation technique for the edge area of silicon solar cells improves the efficiency
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Author keywords
Edge shunt passivation; Efficiency improvement
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Indexed keywords
CRYSTAL DEFECTS;
EFFICIENCY;
LEAKAGE CURRENTS;
PASSIVATION;
PLASMA ETCHING;
EDGE SHUNT PASSIVATION;
SILICON SOLAR CELLS;
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EID: 0036533284
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0927-0248(01)00180-5 Document Type: Conference Paper |
Times cited : (14)
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References (12)
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