Sintering behavior and PTCR properties of stoichiometric blend BaTiO3

Journal of Physics and Chemistry of Solids

Volumn 63, Issue 4, 2002, Pages 631-638

  Mukherjee, N ^a   Roseman, R D ^a   Zhang, Q ^a  

^a University of Cincinnati   (United States)

Author keywords

A. Ceramics; A. Electronic materials; A. Semiconductors; D. Ferroelectricity; D. Microstructure

Indexed keywords

CERAMIC MATERIALS; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; FERROELECTRICITY; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; SEMICONDUCTOR DOPING; SINTERING; STOICHIOMETRY;

STOICHIOMETRIC BLENDS;

BARIUM TITANATE;

EID: 0036532720     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(01)00205-0     Document Type: Article

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