TEM observation of β-FeSi2(1 1 0),(1 0 1)/Si(1 1 1) layers grown by reactive deposition epitaxy in the presence of an Sb flux

Journal of Crystal Growth

Volumn 237-239, Issue 1 4I, 2002, Pages 249-253

  Arakawa, T ^a   Shao, G ^b   Makiuchi, S ^a   Ono, T ^a   Tatsuoka, H ^a   Kuwabara, H ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

A1. Defects; A1. Diffusion; A1. Interfaces; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTAL DEFECTS; DEPOSITION; DIFFUSION; INTERFACES (MATERIALS); IRON COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

REACTIVE DEPOSITION EPITAXY (RDE);

EPITAXIAL GROWTH;

EID: 0036531602     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01887-5     Document Type: Article

References (20)