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Volumn 237-239, Issue 1-4, 2002, Pages 1993-1999

Molecular beam epitaxial growth and characterization of CuInSe2 and CuGaSe2 for device applications

Author keywords

A1. Characterization; A1. Defects; A3. Molecular beam epitaxy; B1. Inorganic compounds; B2. Semiconducting II VI compounds; B3. Solar cells

Indexed keywords

ANNEALING; CHARACTERIZATION; COMPOSITION; CRYSTAL DEFECTS; EXCITONS; FILM GROWTH; GLASS; OXIDATION; PHOTOLUMINESCENCE; POSITRONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SOLAR CELLS; SUBSTRATES; THIN FILMS;

EID: 0036531150     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02302-8     Document Type: Article
Times cited : (26)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.