|
Volumn 237-239, Issue 1-4, 2002, Pages 1993-1999
|
Molecular beam epitaxial growth and characterization of CuInSe2 and CuGaSe2 for device applications
|
Author keywords
A1. Characterization; A1. Defects; A3. Molecular beam epitaxy; B1. Inorganic compounds; B2. Semiconducting II VI compounds; B3. Solar cells
|
Indexed keywords
ANNEALING;
CHARACTERIZATION;
COMPOSITION;
CRYSTAL DEFECTS;
EXCITONS;
FILM GROWTH;
GLASS;
OXIDATION;
PHOTOLUMINESCENCE;
POSITRONS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SOLAR CELLS;
SUBSTRATES;
THIN FILMS;
EXCITON EMISSION;
MOLECULAR BEAM EPITAXY;
|
EID: 0036531150
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)02302-8 Document Type: Article |
Times cited : (26)
|
References (10)
|