Preparation of (Bi, Sb)2S3 semiconductor films by photochemical deposition method

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 2125-2129

  Sasaki, H ^a   Shibayama, K ^a   Ichimura, M ^a   Masui, K ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Surface processes; B1. Bismuth compounds; B1. Sulfides; B2. Semiconducting materials

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CRYSTALLIZATION; DEPOSITION; DIFFERENTIAL SCANNING CALORIMETRY; HYDROCHLORIC ACID; MASKS; NUCLEATION; PHOTOCHEMICAL REACTIONS; RATE CONSTANTS; SEMICONDUCTING BISMUTH COMPOUNDS; SOLUTIONS; SUBSTRATES; SURFACE REACTIONS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

PHOTOCHEMICAL DEPOSITION (PCD); SURFACE PROCESSES;

SEMICONDUCTING FILMS;

EID: 0036531111     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02280-1     Document Type: Article

References (4)