Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1075-1078

  Yoshimoto, Masahiro ^a   Saraie, Junji ^a   Nakamura, Shuji ^b,c  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b NICHIA CORPORATION   (Japan)

^c University of California   (United States)

Author keywords

A1. Characterization; A1. Impurities; A1. Optical microscopy; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL IMPURITIES; EPITAXIAL GROWTH; EXCITONS; IMAGE ANALYSIS; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SILICA;

EPITAXIAL LATERAL GROWTH (ELO); PHOTOLUMINESCENCE MICROSCOPY;

GALLIUM NITRIDE;

EID: 0036531087     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02139-X     Document Type: Article

References (7)