Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 I, 2002, Pages 487-491

  Kakuno, Kosuke ^a   Ito, Daisuke ^a   Fujimura, Norifumi ^a   Matsui, Toshiyuki ^a   Ito, Taichiro ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

A1. Characterization; A1. Interfaces; A3. Laser epitaxy; B1. Oxides; B1. Yttrium compounds; B2. Semiconducting silicon

Indexed keywords

CRYSTALLIZATION; EPITAXIAL GROWTH; FERROELECTRICITY; GATES (TRANSISTOR); INTERFACES (MATERIALS); PERMITTIVITY; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; YTTRIUM COMPOUNDS;

FERROELECTRIC GATE TRANSISTORS;

FERROELECTRIC THIN FILMS;

EID: 0036530949     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01949-2     Document Type: Conference Paper

References (13)