Mathematical simulation of the traveling heater method growth of ternary semiconductor materials under suppressed gravity conditions

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1876-1880

  Lent, B ^a   Dost, S ^b   Redden, R F ^a   Liu, Y ^b  

^a Amistar Res and Development Inc   (Canada)

^b UNIVERSITY OF VICTORIA   (Canada)

Author keywords

A1. Growth models; A1. Solidification; A2. Single crystal growth; A2. Traveling heater method; B2. Semiconducting II VI ternary compounds

Indexed keywords

HEAT CONVECTION; MAGNETIC FIELD EFFECTS; MICROGRAVITY PROCESSING; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SOLIDIFICATION; TERNARY SYSTEMS;

TERNARY SEMICONDUCTOR MATERIALS; TRAVELING HEATER METHODS;

CRYSTAL GROWTH;

EID: 0036530942     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02208-4     Document Type: Article

References (4)