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Journal of Crystal Growth

Volumn 237-239, Issue 1 4 III, 2002, Pages 1966-1970

Growth evolution of β-FeSi2 layers grown by Sb mediated reactive deposition epitaxy

(8) Makiuchi, S a Koga, T a Arakawa, T a Tomoda, W a Maeda, Y b Saito, K c Tatsuoka, H a Kuwabara, H a

a SHIZUOKA UNIVERSITY (Japan)

b Osaka Prefecture University (Japan)

c PHILIPS RESEARCH LABORATORIES (Germany)

Author keywords

A1. Interfaces; A1. Stresses; A1. X ray diffraction; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTALLIZATION; DEPOSITION; INTERFACES (MATERIALS); MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; STRESSES; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

REACTIVE DEPOSITION EPITAXY;

EPITAXIAL GROWTH;

EID: 0036530922 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02292-8 Document Type: Article

Times cited : (8)

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- J. Crystal Growth
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