The effects of boron impurity on the extended defects in CZ silicon crystals grown under interstitial rich conditions

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 III, 2002, Pages 1663-1666

  Terashima, Kazutaka ^a   Noguchi, Hajime ^a  

^a SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Doping; A1. Extended defects; A1. Point defects; A1. Temperature distribution; A2. Czochralski method

Indexed keywords

BORON; DIFFUSION; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); POINT DEFECTS; QUENCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SURFACE TENSION; TEMPERATURE DISTRIBUTION; VISCOSITY;

EXTENDED DEFECTS;

CRYSTAL GROWTH FROM MELT;

EID: 0036530893     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02315-6     Document Type: Article

References (3)