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Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 772-777

Growth mechanism and additive effect of high-Tc superconducting crystals

(5) Chen, C a Wondre, F a Ryan, J F a Narlikar, A V b Samanta, S B b

a UNIVERSITY OF OXFORD (United Kingdom)

b NATIONAL PHYSICAL LABORATORY (India)

Author keywords

A1. Additive; A1. Growth models; A2. Growth from high temperature solutions; B2. High Tc superconductors

Indexed keywords

HIGH TEMPERATURE SUPERCONDUCTORS; OXIDATION; OXIDE SUPERCONDUCTORS; SUPERCONDUCTING TRANSITION TEMPERATURE; SUPERCONDUCTIVITY;

ADDITIVE EFFECTS;

CRYSTAL GROWTH;

EID: 0036530491 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02019-X Document Type: Article

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.