Structural and optical properties of oxidized porous silicon layers activated by Zn2SiO4:Mn2+

Journal of the Electrochemical Society

Volumn 149, Issue 4, 2002, Pages

  Taghavinia, N ^a   Lerondel, G ^a   Makino, H ^a   Parisini, A ^c   Yamamoto, A ^b   Yao, T ^a   Kawazoe, Y ^a   Goto, T ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; IMPREGNATION; LUMINESCENCE; MATHEMATICAL MODELS; OXIDATION; PARTICLE SIZE ANALYSIS; PORE SIZE; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

AVERAGE PORE DENSITY; CRYSTALLINE PARTICLES; DECAY CURVES; DECAY TIME; DECOMPOSITION REACTION; POROUS LAYER; POROUS STRUCTURE; SATURATING TREND; SKELETON SIZE; X RAY MAPPING;

POROUS SILICON;

EID: 0036530388     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1456537     Document Type: Article

References (26)