Changes in properties of a 〈porous silicon〉/silicon system during gradual etching off of the porous silicon layer

Semiconductors

Volumn 36, Issue 3, 2002, Pages 330-335

  Venger, E F ^a   Gorbach, T Ya ^a   Kirillova, S I ^a   Primachenko, V E ^a   Chernobai, V A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036522463     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1461412     Document Type: Article

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