SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1279-1283

Time-varying body instability and low-frequency noise characteristics of mini-field-dual-body silicon-on-insulator structure for analog-digital mixed-mode circuits

(4) Lee, Hyeokjae a,c Lee, Jong Ho b Park, Young June c Min, Hong Shick a

a Kookmin University (South Korea)

b Wonkwang University (South Korea)

c Research Center (South Korea)

Author keywords

1 f noise; Analog digital mixed mode circuits; Floating body effect; Fully depleted MOSFETs; Low frequency noise; Noise overshoot RF application; Partially depleted MOSFETs; SOI

Indexed keywords

DIGITAL CIRCUITS; ELECTRIC RESISTANCE; OPTIMIZATION; OXIDES; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; STABILITY;

ANALOG DEVICES; ANALOG-DIGITAL MIXED-MODE CIRCUITS;

MOSFET DEVICES;

EID: 0036509083 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.1279 Document Type: Article

Times cited : (2)

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