Hydrogen implantation damage in polycrystalline silicon thin film transistors caused by ion doping

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1259-1264

  Furuta, Mamoru ^a   Satani, Hiroshi ^a   Terashita, Toshiaki ^a   Tamura, Tatsuhiko ^a   Tsuchihashi, Yuji ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Boron; ESR; Hydrogen; Ion doping; p channel; Poly Si; SIMS; Thin film transistors; TRIM

Indexed keywords

DOPING (ADDITIVES); HYDROGEN; ION IMPLANTATION; PARAMAGNETIC RESONANCE; POLYSILICON; POSITIVE IONS; SEMICONDUCTING BORON; THRESHOLD VOLTAGE;

HYDROGEN IMPLANTATION; SPIN DENSITY;

THIN FILM TRANSISTORS;

EID: 0036508679     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1259     Document Type: Article

References (22)