Nondestructive, in-line characterization of device performance parameters of shallow junction processes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 2, 2002, Pages 640-643

  Kluth, G Jonathan ^a   En, William G ^a   Borden, P ^b   Bechtler, L ^b   Nijmeijer, R ^b  

^a ADVANCED MICRO DEVICES   (United States)

^b Boxer Cross Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; MOS DEVICES; NONDESTRUCTIVE EXAMINATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SIGNAL TO NOISE RATIO; THRESHOLD VOLTAGE;

CARRIER ILLUMINATION (CI);

SEMICONDUCTOR JUNCTIONS;

EID: 0036504966     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1463071     Document Type: Article

References (2)