Magnetotransport properties of InAs nanostructure devices produced by AFM oxidation

Physica B: Condensed Matter

Volumn 314, Issue 1-4, 2002, Pages 95-98

  Sasa, S ^a   Nakashima, A ^a   Yodogawa, S ^a   Kita, T ^a   Inoue, M ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Atomic force microscope; Electron interference; InAs; Nanoscale oxidation

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; LOW TEMPERATURE EFFECTS; MAGNETORESISTANCE; OXIDATION; SEMICONDUCTING INDIUM COMPOUNDS;

MAGNETOTRANSPORT PROPERTIES; NANOSCALE OXIDATION;

NANOSTRUCTURED MATERIALS;

EID: 0036504023     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)01378-3     Document Type: Article

References (10)