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Volumn 314, Issue 1-4, 2002, Pages 499-502
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Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime
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Author keywords
Density matrix; Quantm dot; Single electron tunneling; Variable confinement
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRON TUNNELING;
ELECTRONIC STRUCTURE;
GATES (TRANSISTOR);
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
DENSITY MATRIX SIMULATION;
VARIABLE LATERAL CONFINEMENT;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0036503536
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-4526(01)01419-3 Document Type: Conference Paper |
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Times cited : (2)
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References (10)
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