Femtosecond intersubband scattering of holes in Si1-xGex/Si quantum wells

Physica B: Condensed Matter

Volumn 314, Issue 1-4, 2002, Pages 255-258

  Kaindl, R A ^a   Woerner, M ^a   Wurm, M ^a   Reimann, K ^a   Elsaesser, T ^a   Miesner, C ^b   Brunner, K ^b   Abstreiter, G ^b  

^a MAX BORN INSTITUT   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Intersubband relaxation; Optical deformation potential; SiGe quantum wells

Indexed keywords

CALCULATIONS; PHONONS; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

FEMTOSECOND INTERSUBBAND SCATTERING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036503510     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)01440-5     Document Type: Conference Paper

References (8)