Reliability of ultra-thin film deep submicron SIMOX nMOSFETs

Solid-State Electronics

Volumn 46, Issue 3, 2002, Pages 367-371

  Potavin, O ^a   Haendler, S ^a   Jomaah, J ^a   Balestra, F ^a   Raynaud, C ^b  

^a Grenoble INP Phelma   (France)

^b CEA LETI   (France)

Author keywords

Hot carriers effects; Interface coupling; Lifetime; Low frequency noise; SOI

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); POLYSILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; ULTRATHIN FILMS;

LOW FREQUENCY NOISE (LFN); SILICON FILMS;

MOSFET DEVICES;

EID: 0036498270     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00110-1     Document Type: Article

References (10)

1. On the subthreshold swing and short channel effects in single and double gate deep submicron SOI MOSFETs
2. An improved analytical solution of energy balance equation for short channel SOI MOSFET and transverse-field-induced carrier heating
3. Low frequency noise in MOS transistors
4. Hot-carrier effects and lifetime prediction in off-state operation of deep submicron SOI nMOSFET's
5. Physical analysis for saturation behavior of hot-carrier degradation in lightly doped drain n-channel metal-oxide-semiconductor field effect transistors. Part 1B
6. Features and mechanisms of the saturating hot-carrier degradation in LDD nMOSFET's
7. Modelling hot-carrier degradation of LDD nMOSFETs by using a high-resolution measurement technique