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Materials Letters

Volumn 53, Issue 1-2, 2002, Pages 76-82

Low-field magnetoresistance in oxygen-deficient La0.5Sr0.5MnO3 thin films as approached by spin-polarized tunneling model

(7) Yuan, G L a Liu, J M a,b Chan, H L W b Choy, C L b Ong, C K c Liu, Z G a Du, Y W a

a NANJING UNIVERSITY (China)

b HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

Low field magnetoresistance; LSMO; Spin polarized tunneling

Indexed keywords

COLOSSAL MAGNETORESISTANCE; ELECTRON TUNNELING; GRAIN BOUNDARIES; LANTHANUM COMPOUNDS; LASER ABLATION; MICROSTRUCTURE; POLARIZATION;

SPIN-POLARIZED TUNNELING (SPT) MODELS;

THIN FILMS;

EID: 0036497883 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/S0167-577X(01)00457-8 Document Type: Article

Times cited : (10)

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