A novel method to achieve 1.54 μm light emission from silica thin films

Journal of Luminescence

Volumn 96, Issue 2-4, 2002, Pages 195-200

  Xiao, Zhisong ^a   Xu, Fei ^b   Zhang, Tonghe ^a   Cheng, Guoan ^b   Gu, Lanlan ^c   Wan, Xun ^c  

^a BEIJING NORMAL UNIVERSITY   (China)

^b NANCHANG UNIVERSITY   (China)

^c FUDAN UNIVERSITY   (China)

Author keywords

Erbium; Ion implantation; Photoluminescence; Si nanocrystal; Silicon oxide

Indexed keywords

ERBIUM; FILM GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; ION SOURCES; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

EXCITATION ENERGY;

THIN FILMS;

EID: 0036495284     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(01)00239-3     Document Type: Article

References (13)