Anisotropy of point defect diffusion in alpha-zirconium

Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science

Volumn 33, Issue 13, 2002, Pages 777-782

  Osetsky, Y N ^a   Bacon, D J ^a   De Diego, N ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC MATERIAL; ATOMIC MASS; ATOMIC-SCALE MECHANISMS; BASAL PLANES; DEFECT POPULATION; ENERGETIC PARTICLES; HIGHER TEMPERATURES; INTERSTITIAL DIFFUSION; INTRINSIC DEFECTS; LOW TEMPERATURES; MASS TRANSPORT; MATRIX; RADIATION GROWTH; RADIATION-INDUCED; SELF-DIFFUSION COEFFICIENTS; SELF-INTERSTITIAL ATOMS; TEMPERATURE RANGE; VACANCY DIFFUSION; VIA POINT;

ACTIVATION ENERGY; ANISOTROPY; ATOMS; DIFFUSION; GROWTH (MATERIALS); MOLECULAR DYNAMICS; POINT DEFECTS; POPULATION STATISTICS; SEMICONDUCTOR DEVICE MANUFACTURE; THREE DIMENSIONAL; ZIRCONIUM;

DEFECTS;

EID: 0036495195     PISSN: 10735623     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11661-002-1007-3     Document Type: Article

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