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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 2, 2002, Pages 338-343

Deposition of silicon alloys in an integrated distributed electron cyclotron resonance reactor: Oxide, nitride, oxinitrides, and multilayer structures

(6) Bulkin, P a Hofrichter, A a Heitz, T a Huc, J a Drevillon B a Benattar, J J b

a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

b SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; FILM GROWTH; INFRARED SPECTROSCOPY; MULTILAYERS; OPTICAL FILTERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; PLASMA SOURCES; POLYCARBONATES; RATE CONSTANTS; SILICON ALLOYS; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

DISTRIBUTED ELECTRON CYCLOTRON RESONANCE (DECR) PLASMAS; PHASE-MODULATED SPECTROSCOPIC ELLIPSOMETRY;

THIN FILMS;

EID: 0036494581 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1445158 Document Type: Article

Times cited : (8)

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