Fabrication of 3.9-4.2 μm mid-infrared surface emitting PbSe/PbEuTe quantum dot lasers using molecular beam epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 876-880

  Springholz, G ^a,d   Schwarzl, T ^a   Heiss, W ^a   Fromherz, T ^a   Bauer, G ^a   Aigle, M ^b   Pascher, H ^b   Vavra, I ^c  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b UNIVERSITY OF BAYREUTH   (Germany)

^c INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^d Tel: +43 732 2468 9602 ^*  (Austria)

Author keywords

Infrared spectroscopy; IV VI compounds; Lasers; Molecular beam epitaxy; Quantum dots

Indexed keywords

QUANTUM DOT LASERS;

FABRICATION; INFRARED SPECTROSCOPY; MIRRORS; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

SEMICONDUCTOR LASERS;

EID: 0036492986     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00224-2     Document Type: Conference Paper

References (14)