Gated wires and interferometers based on Si/SiGe heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1043-1046

  Estibals, O ^a,b   Kvon, Z D ^a,c   Portal, J C ^a,b,d   Plotnikov, A Y ^c   Gauffier, J L ^b   Woods, N J ^e   Zhang, J ^f   Harris, J J ^f  

^a GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^b INSA   (France)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^d INSTITUT UNIVERSITAIRE DE FRANCE   (France)

^e IMPERIAL COLLEGE LONDON   (United Kingdom)

^f UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Aharonov Bohm effect; Quantum wires and rings interferometers; Si SiGe heterostructures

Indexed keywords

GATED WIRES;

ANISOTROPY; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRON BEAM LITHOGRAPHY; ELECTRON GAS; ELECTRON MOBILITY; ELECTRON SCATTERING; ENERGY TRANSFER; ETCHING; HETEROJUNCTIONS; INTERFEROMETERS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0036492889     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00298-9     Document Type: Conference Paper

References (6)