Optical properties of wetting layers in stacked InAs/GaAs quantum dot structures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 289-292

  Winzer, A T ^a   Goldhahn, R ^a   Gobsch, G ^a   Heidemeyer, H ^b   Schmidt, O G ^b   Eberl, K ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Photoluminescence; Photoreflectance; Quantum dot; Wetting layer

Indexed keywords

CRYSTAL GROWTH; LIGHT ABSORPTION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

PHOTOREFLECTANCE; WETTING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036492854     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00539-2     Document Type: Article

References (8)