Edge-photoluminescence concentration dependence in semi-insulating undoped GaAs

Semiconductors

Volumn 36, Issue 2, 2002, Pages 167-170

  Kovalenko, V F ^a   Litvinova, M B ^a   Shutov, S V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036487340     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1453431     Document Type: Article

References (11)

1. K.D. Glinchuk, V.I. Guroshev, and A.V. Prokhorovich, Optoélektron. Poluprovodn. Tekh. 24, 66 (1992).
2. M. Suemitsu, M. Nishijima, and N. Miyamoto, J. Appl. Phys. 69, 7240 (1991).
3. M.W. Duncan, G.H. Westphal, and A.J. Purdes, J. Appl. Phys. 66, 2430 (1989).
4. Yu.N. Bol'sheva, M.A. Il'in, and A.V. Markov, Vysokochist. Veshchestva, No. 4, 210 (1989).
5. M.I. Kalinin, M.T. Lisitsa, and F.V. Motsnyi, Ukr. Fiz. Zh. 37 (3), 330 (1992).
6. M.I. Kalinin, M.T. Lisitsa, and F.V. Motsnyi, Ukr. Fiz. Zh. 37 (4), 528 (1992).
7. K.D. Glinchuk, N.M. Litovchenko, A.V. Prokhorovich, and O.N. Strel'chuk, Optoélektron. Poluprovodn. Tekh. 32, 61 (1997).
8. V.S. Bagaev, L.I. Paduchikh, and T.S. Sakhonenko, Excitons in Semiconductors (Nauka, Moscow, 1971), p. 54.
9. A.P. Levanyuk and V.V. Osipov, Usp. Fiz. Nauk 133 (3), 427 (1981) [Sov. Phys, Usp. 24, 187 (1981)].
10. B.I. Shklovskii and A.L. Efros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer-Verlag, New York, 1984).
11. E. Grilli, M. Guzzi, R. Zamboni, and L. Pavesi, Phys. Rev. B 45, 1638 (1992).