Effect of Ga2O3 on microstructure and microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 ceramics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 702-706

  Yang, Jung In ^a   Nahm, Sahn ^a,c   Choi, Chang Hack ^a   Lee, Hwack Joo ^b   Kim, Jae Cheon ^b   Park, Hyun Min ^a  

^a Korea University   (South Korea)

^b Advanced Materials on Technology   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Ba(Zn1 3Ta2 3)O3; Dielectric constant; Ga2O3; Q f value; Temperature coefficient of resonant frequency

Indexed keywords

BARIUM COMPOUNDS; GALLIUM COMPOUNDS; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; MICROWAVES; NATURAL FREQUENCIES; PERMITTIVITY;

LIQUID PHASE FORMATION;

CERAMIC MATERIALS;

EID: 0036478644     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.702     Document Type: Article

References (9)