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Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1354-1358

Identification of silicon as the dominant hole trap in YVO 4 crystals

(5) Garces, N Y a Halliburton, L E a Stevens, K T b Shone, M b Foundos, G K b

a WEST VIRGINIA UNIVERSITY (United States)

b NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; ELECTRON NUCLEAR DOUBLE RESONANCE; ELECTRON-DEFICIENT; G MATRICES; OXYGEN IONS; SILICON IMPURITY; SILICON ION; SMALL CONCENTRATION; YTTRIUM ION;

ELECTRON SPIN RESONANCE SPECTROSCOPY; HOLE TRAPS; IONIZING RADIATION; MAGNETIC RESONANCE; OXYGEN; PARAMAGNETISM; RADIATION SHIELDING; VANADIUM; YTTRIUM;

IONS;

EID: 0036469968 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1428087 Document Type: Article

Times cited : (9)

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