Monte Carlo study of hole mobility in Al-doped 4H-SiC

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1359-1364

  Martinez, A ^a   Lindefelt, U ^a   Hjelm, M ^a   Nilsson, H E ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b MID SWEDEN UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING DEPENDENCE; IMPURITY ATOMS; INCOMPLETE IONIZATION; MONTE CARLO; MONTE CARLO PROGRAMS; MONTE CARLO STUDY; NEUTRAL IMPURITY SCATTERING; OHMIC TRANSPORT; OPTICAL PHONON SCATTERING; P-TYPE;

HOLE MOBILITY; MONTE CARLO METHODS; SILICON CARBIDE;

ALUMINUM;

EID: 0036469613     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1429802     Document Type: Article

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