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Volumn 91, Issue 3, 2002, Pages 1314-1317
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High-temperature post-oxidation annealing on the low-temperature oxide/4H-SiC(0001)
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Author keywords
[No Author keywords available]
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Indexed keywords
C-V MEASUREMENT;
EFFECTIVE CHARGE;
HIGH TEMPERATURE;
INTERFACIAL OXIDES;
INTERFACIAL PROPERTY;
LOW-TEMPERATURE OXIDES;
METAL OXIDE SEMICONDUCTOR;
POST-OXIDATION;
SOFTENING TEMPERATURE;
TEMPERATURE DEPENDENCE;
CHEMICAL VAPOR DEPOSITION;
DIELECTRIC DEVICES;
DIELECTRIC MATERIALS;
GATE DIELECTRICS;
MOS CAPACITORS;
SILICON OXIDES;
SILICON CARBIDE;
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EID: 0036469341
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1428099 Document Type: Article |
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Times cited : (12)
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References (14)
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