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Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 195-200

Growth and characterization of ZnSe and phosphorus-doped ZnSe single crystals

(3) Sankar, N a Ramachandran, K a Sanjeeviraja, C b

a MADURAI KAMARAJ UNIVERSITY (India)

b ALAGAPPA UNIVERSITY (India)

Author keywords

A1. Defects; A1. Point defects; A2. Growth form vapor; A2. Single crystal growth; B1. Zinc compounds

Indexed keywords

CARRIER MOBILITY; HALL EFFECT; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; STOICHIOMETRY; X RAY ANALYSIS;

HALL MOBILITY;

SINGLE CRYSTALS;

EID: 0036467312 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02044-9 Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.