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Volumn 46, Issue 2, 2002, Pages 269-277

Comparison of deep levels spectra and electrical properties of GaAs crystals grown by vertical Bridgeman and by liquid encapsulated Czochralski methods

(6) Markov, A V a Polyakov, A Y a Smirnov, N B a Bolsheva, Y N a Govorkov, A V a Sharonov, B N a

a INSTITUTE OF RARE METALS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; CRYSTAL GROWTH FROM MELT; ELECTRON TRAPS; LIGHT ABSORPTION; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

SEMI-INSULATING CRYSTALS;

CRYSTALS;

EID: 0036467018 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00270-2 Document Type: Article

Times cited : (15)

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